All MOSFET. APQ10SN60AF Datasheet

 

APQ10SN60AF MOSFET. Datasheet pdf. Equivalent


   Type Designator: APQ10SN60AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39.4 nC
   trⓘ - Rise Time: 32.3 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F

 APQ10SN60AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APQ10SN60AF Datasheet (PDF)

 ..1. Size:687K  alpha pacific
 apq10sn60af.pdf

APQ10SN60AF APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.1. Size:437K  alpha pacific
 apq10sn60a.pdf

APQ10SN60AF APQ10SN60AF

DEVICE SPECIFICATION apQ10SN60A(F)600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10ARDS(on) =0.6(Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

 4.2. Size:687K  alpha pacific
 apq10sn60ah.pdf

APQ10SN60AF APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 6.1. Size:373K  alpha pacific
 apq10sn65af apq10sn65ah.pdf

APQ10SN60AF APQ10SN60AF

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75(typ)VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RSF014N03

 

 
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