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APQ10SN60AF PDF Specs and Replacement


   Type Designator: APQ10SN60AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 32.3 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F
 

 APQ10SN60AF substitution

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APQ10SN60AF PDF Specs

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APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

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APQ10SN60AF

DEVICE SPECIFICATION apQ10SN60A(F) 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A RDS(on) =0.6 (Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

 4.2. Size:687K  alpha pacific
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APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

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APQ10SN60AF

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75 (typ) VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo... See More ⇒

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Detailed specifications: APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ , APQ10SN40A , APQ10SN40AF , APQ10SN40AH , APQ10SN60A , AO4407A , APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH , APQ11BSN40A , APQ12SN60A .

History: APQ10SN65AF | P0703BD

Keywords - APQ10SN60AF MOSFET specs

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History: APQ10SN65AF | P0703BD

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