All MOSFET. APQ10SN60AF Datasheet

 

APQ10SN60AF Datasheet and Replacement


   Type Designator: APQ10SN60AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 39.4 nC
   tr ⓘ - Rise Time: 32.3 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F
 

 APQ10SN60AF substitution

   - MOSFET ⓘ Cross-Reference Search

 

APQ10SN60AF Datasheet (PDF)

 ..1. Size:687K  alpha pacific
 apq10sn60af.pdf pdf_icon

APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.1. Size:437K  alpha pacific
 apq10sn60a.pdf pdf_icon

APQ10SN60AF

DEVICE SPECIFICATION apQ10SN60A(F)600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10ARDS(on) =0.6(Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

 4.2. Size:687K  alpha pacific
 apq10sn60ah.pdf pdf_icon

APQ10SN60AF

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 6.1. Size:373K  alpha pacific
 apq10sn65af apq10sn65ah.pdf pdf_icon

APQ10SN60AF

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75(typ)VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

SHOW MORE

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFK32N90P

Keywords - APQ10SN60AF MOSFET datasheet

 APQ10SN60AF cross reference
 APQ10SN60AF equivalent finder
 APQ10SN60AF lookup
 APQ10SN60AF substitution
 APQ10SN60AF replacement

 

 
Back to Top

 


 
.