APQ110SN5EAD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APQ110SN5EAD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 200 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 110 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 25.7 nC
   Tiempo de subida (tr): 35.2 nS
   Conductancia de drenaje-sustrato (Cd): 320 pF
   Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
   Paquete / Cubierta: TO-247

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APQ110SN5EAD Datasheet (PDF)

..1. Size:338K alpha pacific
apq110sn5ead.pdf

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ)VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s

3.1. Size:187K alpha pacific
apq110sn5eah.pdf

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

3.2. Size:92K alpha pacific
apq110sn5ea.pdf

DEVICE SPECIFICATION apQ110SN5EA55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

9.1. Size:379K alpha pacific
apq11bsn40a.pdf

DEVICE SPECIFICATION apQ11BSN40A400V/11.2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

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