APQ110SN5EAD Datasheet. Specs and Replacement

Type Designator: APQ110SN5EAD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35.2 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-247

  📄📄 Copy 

APQ110SN5EAD substitution

- MOSFET ⓘ Cross-Reference Search

 

APQ110SN5EAD datasheet

 ..1. Size:338K  alpha pacific
apq110sn5ead.pdf pdf_icon

APQ110SN5EAD

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s... See More ⇒

 3.1. Size:187K  alpha pacific
apq110sn5eah.pdf pdf_icon

APQ110SN5EAD

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on... See More ⇒

 3.2. Size:92K  alpha pacific
apq110sn5ea.pdf pdf_icon

APQ110SN5EAD

DEVICE SPECIFICATION apQ110SN5EA 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

 9.1. Size:379K  alpha pacific
apq11bsn40a.pdf pdf_icon

APQ110SN5EAD

DEVICE SPECIFICATION apQ11BSN40A 400V/11.2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

Detailed specifications: APQ10SN40AF, APQ10SN40AH, APQ10SN60A, APQ10SN60AF, APQ10SN60AH, APQ10SN65AF, APQ10SN65AH, APQ110SN5EA, IRF3205, APQ110SN5EAH, APQ11BSN40A, APQ12SN60A, APQ12SN60AF, APQ12SN60AH, APQ12SN65AF, APQ12SN65AH, APQ13SN50A

Keywords - APQ110SN5EAD MOSFET specs

 APQ110SN5EAD cross reference

 APQ110SN5EAD equivalent finder

 APQ110SN5EAD pdf lookup

 APQ110SN5EAD substitution

 APQ110SN5EAD replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.