APQ12SN60AH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ12SN60AH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 225 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 83 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO-220

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APQ12SN60AH datasheet

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APQ12SN60AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52 (typ) VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 4.1. Size:754K  alpha pacific
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APQ12SN60AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52 (typ) VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 4.2. Size:458K  alpha pacific
 apq12sn60a.pdf pdf_icon

APQ12SN60AH

DEVICE SPECIFICATION apQ12SN60A(F) 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini

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 apq12sn65af apq12sn65ah.pdf pdf_icon

APQ12SN60AH

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6 (typ) VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor

MOSTRAR MÁS

Otros transistores... APQ10SN65AF, APQ10SN65AH, APQ110SN5EA, APQ110SN5EAD, APQ110SN5EAH, APQ11BSN40A, APQ12SN60A, APQ12SN60AF, IRF540N, APQ12SN65AF, APQ12SN65AH, APQ13SN50A, APQ13SN50AF, APQ13SN50AH, APQ14SN65AF, APQ14SN65AH, APQ16SN06AA