All MOSFET. APQ12SN60AH Datasheet

 

APQ12SN60AH Datasheet and Replacement


   Type Designator: APQ12SN60AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220
 

 APQ12SN60AH substitution

   - MOSFET ⓘ Cross-Reference Search

 

APQ12SN60AH Datasheet (PDF)

 ..1. Size:754K  alpha pacific
 apq12sn60ah.pdf pdf_icon

APQ12SN60AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 4.1. Size:754K  alpha pacific
 apq12sn60af.pdf pdf_icon

APQ12SN60AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 4.2. Size:458K  alpha pacific
 apq12sn60a.pdf pdf_icon

APQ12SN60AH

DEVICE SPECIFICATION apQ12SN60A(F)600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini

 6.1. Size:706K  alpha pacific
 apq12sn65af apq12sn65ah.pdf pdf_icon

APQ12SN60AH

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6(typ)VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor

SHOW MORE

Datasheet: APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH , APQ11BSN40A , APQ12SN60A , APQ12SN60AF , IRF540N , APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA .

History: BLF6G13L-250P | MDF10N60GTH | TMP16N60 | SIHF530S | JCS540WT | B4N80 | HA20N60

Keywords - APQ12SN60AH MOSFET datasheet

 APQ12SN60AH cross reference
 APQ12SN60AH equivalent finder
 APQ12SN60AH lookup
 APQ12SN60AH substitution
 APQ12SN60AH replacement

 

 
Back to Top

 


 
.