APQ4ESN65AH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APQ4ESN65AH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 106 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 14 nC
Tiempo de subida (tr): 42 nS
Conductancia de drenaje-sustrato (Cd): 50 pF
Resistencia entre drenaje y fuente RDS(on): 2.8 Ohm
Paquete / Cubierta: TO-220
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APQ4ESN65AH Datasheet (PDF)
apq4esn65af apq4esn65ah.pdf
DEVICE SPECIFICATION APQ4ESN65AH APQ4ESN65AF 650V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 4.5A effect transistors are produced using planar stripe, RDS(on) =2.4(typ)VGS =10V, ID =2.25A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore
apq4esn50a.pdf
DEVICE SPECIFICATION apQ4ESN50A(F)500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize
apq4esn50ab.pdf
DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o
apq4esn50ae.pdf
DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on
apq4esn50af apq4esn50ah.pdf
DEVICE SPECIFICATION APQ4ESN50AH APQ4ESN50AF 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
