Справочник MOSFET. APQ4ESN65AH

 

APQ4ESN65AH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APQ4ESN65AH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 106 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14 nC
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для APQ4ESN65AH

 

 

APQ4ESN65AH Datasheet (PDF)

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 apq4esn65af apq4esn65ah.pdf

APQ4ESN65AH APQ4ESN65AH

DEVICE SPECIFICATION APQ4ESN65AH APQ4ESN65AF 650V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 4.5A effect transistors are produced using planar stripe, RDS(on) =2.4(typ)VGS =10V, ID =2.25A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

 7.1. Size:504K  alpha pacific
 apq4esn50a.pdf

APQ4ESN65AH APQ4ESN65AH

DEVICE SPECIFICATION apQ4ESN50A(F)500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

 7.2. Size:643K  alpha pacific
 apq4esn50ab.pdf

APQ4ESN65AH APQ4ESN65AH

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

 7.3. Size:662K  alpha pacific
 apq4esn50ae.pdf

APQ4ESN65AH APQ4ESN65AH

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

 7.4. Size:878K  alpha pacific
 apq4esn50af apq4esn50ah.pdf

APQ4ESN65AH APQ4ESN65AH

DEVICE SPECIFICATION APQ4ESN50AH APQ4ESN50AF 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

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