APQ65SN06A Todos los transistores

 

APQ65SN06A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ65SN06A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32.4 nS
   Cossⓘ - Capacitancia de salida: 449 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de APQ65SN06A MOSFET

   - Selección ⓘ de transistores por parámetros

 

APQ65SN06A Datasheet (PDF)

 ..1. Size:92K  alpha pacific
 apq65sn06a.pdf pdf_icon

APQ65SN06A

DEVICE SPECIFICATION apQ65SN06A60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

 0.1. Size:521K  alpha pacific
 apq65sn06ah.pdf pdf_icon

APQ65SN06A

DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 0.2. Size:709K  alpha pacific
 apq65sn06ad.pdf pdf_icon

APQ65SN06A

DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ)VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Otros transistores... APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , AO3400 , APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 , CEB110P03 .

History: IPSA70R1K4CE | TD422BL | FMV10N80E | SPP80N05L | FDM100-0045SP | HUF75831SK8T | LSGE10R080W3

 

 
Back to Top

 


 
.