APQ65SN06A Datasheet and Replacement. Cross Reference Search

APQ65SN06A Datasheet (PDF)

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DEVICE SPECIFICATION apQ65SN06A60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

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DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ)VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Datasheet: APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , IRFP260 , APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 , CEB110P03 .