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APQ65SN06AH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ65SN06AH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 135 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 65 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 45 nC
   Tiempo de subida (tr): 32.4 nS
   Conductancia de drenaje-sustrato (Cd): 449 pF
   Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
   Paquete / Cubierta: TO-220

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APQ65SN06AH Datasheet (PDF)

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apq65sn06ah.pdf

APQ65SN06AH
APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 4.1. Size:92K  alpha pacific
apq65sn06a.pdf

APQ65SN06AH
APQ65SN06AH

DEVICE SPECIFICATION apQ65SN06A60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

 4.2. Size:709K  alpha pacific
apq65sn06ad.pdf

APQ65SN06AH
APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ)VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

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