APQ65SN06AH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ65SN06AH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32.4 nS

Cossⓘ - Capacitancia de salida: 449 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-220

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APQ65SN06AH datasheet

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APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m (typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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APQ65SN06AH

DEVICE SPECIFICATION apQ65SN06A 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

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APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m (typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Otros transistores... APQ50SN06AH, APQ57SN10B, APQ57SN10BH, APQ5ESN40A, APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A, APQ65SN06AD, IRFP260, APQ84SN06A, APQ84SN06AD, APQ84SN06AH, APQ9ESN20AB, CEB05N8, CEB110P03, CEB18N5, CEB30N3