APQ65SN06AH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APQ65SN06AH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 135 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 65 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 45 nC
Tiempo de subida (tr): 32.4 nS
Conductancia de drenaje-sustrato (Cd): 449 pF
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: TO-220
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APQ65SN06AH Datasheet (PDF)
apq65sn06ah.pdf
DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st
apq65sn06a.pdf
DEVICE SPECIFICATION apQ65SN06A60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state
apq65sn06ad.pdf
DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ)VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat
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