APQ65SN06AH Specs and Replacement

Type Designator: APQ65SN06AH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.4 nS

Cossⓘ - Output Capacitance: 449 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-220

APQ65SN06AH substitution

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APQ65SN06AH datasheet

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APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m (typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st... See More ⇒

 4.1. Size:92K  alpha pacific
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APQ65SN06AH

DEVICE SPECIFICATION apQ65SN06A 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

 4.2. Size:709K  alpha pacific
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APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m (typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

Detailed specifications: APQ50SN06AH, APQ57SN10B, APQ57SN10BH, APQ5ESN40A, APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A, APQ65SN06AD, IRFP260, APQ84SN06A, APQ84SN06AD, APQ84SN06AH, APQ9ESN20AB, CEB05N8, CEB110P03, CEB18N5, CEB30N3

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