All MOSFET. APQ65SN06AH Datasheet

 

APQ65SN06AH Datasheet and Replacement


   Type Designator: APQ65SN06AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32.4 nS
   Cossⓘ - Output Capacitance: 449 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220
 

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APQ65SN06AH Datasheet (PDF)

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APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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APQ65SN06AH

DEVICE SPECIFICATION apQ65SN06A60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

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APQ65SN06AH

DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m(typ)VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Datasheet: APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , IRFP260 , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 , CEB110P03 , CEB18N5 , CEB30N3 .

History: AP2319GN-HF | VS4604ATD | AFN3414S | AP2318GEN-HF | HY7N80T | CSD17303Q5 | JCS3AN150AA

Keywords - APQ65SN06AH MOSFET datasheet

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