CEB30N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEB30N3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO-263

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CEB30N3 datasheet

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 ceb30n3 cef30n3 cep30n3.pdf pdf_icon

CEB30N3

CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP30N3 300V 110m 30A 10V CEB30N3 300V 110m 30A 10V CEF30N3 300V 110m 30A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERI

 8.1. Size:415K  cet
 cep30n15l ceb30n15l.pdf pdf_icon

CEB30N3

CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS T

 9.1. Size:408K  cet
 cep3060 ceb3060.pdf pdf_icon

CEB30N3

CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25

 9.2. Size:394K  cet
 cep30p03 ceb30p03.pdf pdf_icon

CEB30N3

CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32m @VGS = -10V. RDS(ON) =50m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc

MOSTRAR MÁS

Otros transistores... APQ65SN06AH, APQ84SN06A, APQ84SN06AD, APQ84SN06AH, APQ9ESN20AB, CEB05N8, CEB110P03, CEB18N5, 5N65, CED05N8, CED5175, CED6042, CEDM7001, CEDM7001E, CEDM7001VL, CEDM7002AE, CEDM7004