CEB30N3 Datasheet and Replacement
Type Designator: CEB30N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-263
CEB30N3 substitution
CEB30N3 Datasheet (PDF)
ceb30n3 cef30n3 cep30n3.pdf

CEP30N3/CEB30N3CEF30N3N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP30N3 300V 110m 30A 10VCEB30N3 300V 110m 30A 10VCEF30N3 300V 110m 30A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIES CEP SERIES CEF SERI
cep30n15l ceb30n15l.pdf

CEP30N15L/CEB30N15LN-Channel Enhancement Mode Field Effect Transistor FEATURES150V, 30A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS T
cep3060 ceb3060.pdf

CEP3060/CEB3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25
cep30p03 ceb30p03.pdf

CEP30P03/CEB30P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -30A, RDS(ON) =32m @VGS = -10V.RDS(ON) =50m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc
Datasheet: APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 , CEB110P03 , CEB18N5 , 4435 , CED05N8 , CED5175 , CED6042 , CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 .
History: 2SJ382 | FDP045N10AF102 | AFN4900W | DMN2990UFA | IPB60R190C6 | BSZ011NE2LS5I | SI8851EDB
Keywords - CEB30N3 MOSFET datasheet
CEB30N3 cross reference
CEB30N3 equivalent finder
CEB30N3 lookup
CEB30N3 substitution
CEB30N3 replacement
History: 2SJ382 | FDP045N10AF102 | AFN4900W | DMN2990UFA | IPB60R190C6 | BSZ011NE2LS5I | SI8851EDB



LIST
Last Update
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
irf9530 | 2n2222a transistor | irfp250 | irf640n datasheet | irf540 datasheet | irf530 | 2n3565 | irf530n