CED6042 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CED6042

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 74 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 90 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 33 nS

Conductancia de drenaje-sustrato (Cd): 450 pF

Resistencia drenaje-fuente RDS(on): 0.005 Ohm

Empaquetado / Estuche: TO-251

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CED6042 Datasheet (PDF)

1.1. ced6042.pdf Size:360K _upd-mosfet

CED6042/CEU6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 90A , RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc =

1.2. ced6042.pdf Size:360K _cet

5.1. ceu6056 ced6056.pdf Size:410K _cet

CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

5.2. ceu6086 ced6086.pdf Size:410K _cet

CED6086/CEU6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 8.7mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw

5.3. ceu6060n ced6060n.pdf Size:420K _cet

CED6060N/CEU6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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