CEDM8001 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CEDM8001

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 15 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: SOT-883L

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CEDM8001 datasheet

 ..1. Size:358K  central
 cedm8001.pdf pdf_icon

CEDM8001

CEDM8001 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFET a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage. MARKING CODE F FEATURES

 0.1. Size:959K  central
 cedm8001vl.pdf pdf_icon

CEDM8001

CEDM8001VL SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8001VL is a MOSFET P-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off

 7.1. Size:451K  central
 cedm8004.pdf pdf_icon

CEDM8001

CEDM8004 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8004 is an SILICON MOSFET enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage. MARKING CODE V FEATURES SOT-883L CASE

 7.2. Size:951K  central
 cedm8004vl.pdf pdf_icon

CEDM8001

CEDM8004VL SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM8004VL is an MOSFET P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE V COMPLEMENTARY N-CHA

MOSTRAR MÁS

Otros transistores... CED5175, CED6042, CEDM7001, CEDM7001E, CEDM7001VL, CEDM7002AE, CEDM7004, CEDM7004VL, TK10A60D, CEDM8001VL, CEDM8004, CEDM8004VL, CEEF02N65G, CEF05N8, CEF18N5, CEF30N3, CEM101