CEDM8001 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CEDM8001
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 0.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 15 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
Тип корпуса: SOT-883L
Аналог (замена) для CEDM8001
CEDM8001 Datasheet (PDF)
cedm8001.pdf

CEDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: FFEATURES:
cedm8001vl.pdf

CEDM8001VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001VL is aMOSFETP-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off
cedm8004.pdf

CEDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004 is anSILICON MOSFETenhancement-mode P-Channel MOSFET, manufacturedby the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage.MARKING CODE: VFEATURES:SOT-883L CASE
cedm8004vl.pdf

CEDM8004VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004VL is anMOSFETP-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: VCOMPLEMENTARY N-CHA
Другие MOSFET... CED5175 , CED6042 , CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , IRFZ24N , CEDM8001VL , CEDM8004 , CEDM8004VL , CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 , CEM101 .
History: HFP8N70U | AP4506GEM | DHBSJ5N65 | AP3NR68CDT | 2N60L-TN3-R | HM24N50A | FDD9411F085
History: HFP8N70U | AP4506GEM | DHBSJ5N65 | AP3NR68CDT | 2N60L-TN3-R | HM24N50A | FDD9411F085



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