CEDM8001VL Todos los transistores

 

CEDM8001VL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEDM8001VL
   Código: 8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: SOT-883VL
 

 Búsqueda de reemplazo de CEDM8001VL MOSFET

   - Selección ⓘ de transistores por parámetros

 

CEDM8001VL Datasheet (PDF)

 ..1. Size:959K  central
 cedm8001vl.pdf pdf_icon

CEDM8001VL

CEDM8001VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001VL is aMOSFETP-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off

 6.1. Size:358K  central
 cedm8001.pdf pdf_icon

CEDM8001VL

CEDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: FFEATURES:

 7.1. Size:451K  central
 cedm8004.pdf pdf_icon

CEDM8001VL

CEDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004 is anSILICON MOSFETenhancement-mode P-Channel MOSFET, manufacturedby the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage.MARKING CODE: VFEATURES:SOT-883L CASE

 7.2. Size:951K  central
 cedm8004vl.pdf pdf_icon

CEDM8001VL

CEDM8004VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004VL is anMOSFETP-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: VCOMPLEMENTARY N-CHA

MOSTRAR MÁS

Otros transistores... CED6042 , CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , P60NF06 , CEDM8004 , CEDM8004VL , CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 , CEM101 , CEM2133 .

History: PHD9NQ20T | LNC06R230

 

 
Back to Top

 


 
.