All MOSFET. CEDM8001VL Datasheet

 

CEDM8001VL Datasheet and Replacement


   Type Designator: CEDM8001VL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-883VL
 

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CEDM8001VL Datasheet (PDF)

 ..1. Size:959K  central
cedm8001vl.pdf pdf_icon

CEDM8001VL

CEDM8001VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001VL is aMOSFETP-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET off

 6.1. Size:358K  central
cedm8001.pdf pdf_icon

CEDM8001VL

CEDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: FFEATURES:

 7.1. Size:451K  central
cedm8004.pdf pdf_icon

CEDM8001VL

CEDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004 is anSILICON MOSFETenhancement-mode P-Channel MOSFET, manufacturedby the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(on) and low threshold voltage.MARKING CODE: VFEATURES:SOT-883L CASE

 7.2. Size:951K  central
cedm8004vl.pdf pdf_icon

CEDM8001VL

CEDM8004VLSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM8004VL is anMOSFETP-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: VCOMPLEMENTARY N-CHA

Datasheet: CED6042 , CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , P60NF06 , CEDM8004 , CEDM8004VL , CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 , CEM101 , CEM2133 .

History: FC591601 | SWP630A1 | MPSW65M046CFD | AP3990R-HF | GSM6561 | APT20M40HVR | 2SK664

Keywords - CEDM8001VL MOSFET datasheet

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