CEP18N5 Todos los transistores

 ..1. Size:379K  cet
 ceb18n5 cep18n5.pdf

CEP18N5/CEB18N5 CEF18N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP18N5 500V 0.27 18A 10V CEB18N5 500V 0.27 18A 10V CEF18N5 500V 0.27 18A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER

 ..2. Size:288K  inchange semiconductor
 cep18n5.pdf

isc N-Channel MOSFET Transistor CEP18N5 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:294K  ncepower
 ncep18n10ar.pdf

http //www.ncepower.com NCEP18N10AR NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l

 8.2. Size:735K  ncepower
 ncep18n10ak.pdf

http //www.ncepower.com NCEP18N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AK uses Super Trench II technology that is V =100V,I =42A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON)

 8.3. Size:326K  ncepower
 ncep18n10aq.pdf

http //www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo

 8.4. Size:874K  ncepower
 ncep18n10ag.pdf

http //www.ncepower.com NCEP18N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AG uses Super Trench II technology that is V =100V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON)