CEP18N5 Specs and Replacement
Type Designator: CEP18N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 305 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-220
CEP18N5 substitution
- MOSFET ⓘ Cross-Reference Search
CEP18N5 datasheet
ceb18n5 cep18n5.pdf
CEP18N5/CEB18N5 CEF18N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP18N5 500V 0.27 18A 10V CEB18N5 500V 0.27 18A 10V CEF18N5 500V 0.27 18A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒
cep18n5.pdf
isc N-Channel MOSFET Transistor CEP18N5 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
ncep18n10ar.pdf
http //www.ncepower.com NCEP18N10AR NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l... See More ⇒
ncep18n10ak.pdf
http //www.ncepower.com NCEP18N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AK uses Super Trench II technology that is V =100V,I =42A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON) ... See More ⇒
Detailed specifications: CEF05N8, CEF18N5, CEF30N3, CEM101, CEM2133, CEM4248, CEP05N8, CEP110P03, 20N50, CEP30N3, CEU5175, HX2N60, HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6
Keywords - CEP18N5 MOSFET specs
CEP18N5 cross reference
CEP18N5 equivalent finder
CEP18N5 pdf lookup
CEP18N5 substitution
CEP18N5 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: HM35P04D | HUF76429D3ST | CEP08N6A
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
bd139 transistor | irf840 datasheet | ge10001 | irf830 | irfp450 | mj21193 | s9014 transistor | bc547 transistor datasheet
