CEP18N5 Specs and Replacement

Type Designator: CEP18N5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 305 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO-220

CEP18N5 substitution

- MOSFET ⓘ Cross-Reference Search

 

CEP18N5 datasheet

 ..1. Size:379K  cet
ceb18n5 cep18n5.pdf pdf_icon

CEP18N5

CEP18N5/CEB18N5 CEF18N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP18N5 500V 0.27 18A 10V CEB18N5 500V 0.27 18A 10V CEF18N5 500V 0.27 18A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SER... See More ⇒

 ..2. Size:288K  inchange semiconductor
cep18n5.pdf pdf_icon

CEP18N5

isc N-Channel MOSFET Transistor CEP18N5 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.1. Size:294K  ncepower
ncep18n10ar.pdf pdf_icon

CEP18N5

http //www.ncepower.com NCEP18N10AR NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l... See More ⇒

 8.2. Size:735K  ncepower
ncep18n10ak.pdf pdf_icon

CEP18N5

http //www.ncepower.com NCEP18N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AK uses Super Trench II technology that is V =100V,I =42A DS D uniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5V DS(ON) ... See More ⇒

Detailed specifications: CEF05N8, CEF18N5, CEF30N3, CEM101, CEM2133, CEM4248, CEP05N8, CEP110P03, 20N50, CEP30N3, CEU5175, HX2N60, HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, HX70N6

Keywords - CEP18N5 MOSFET specs

 CEP18N5 cross reference

 CEP18N5 equivalent finder

 CEP18N5 pdf lookup

 CEP18N5 substitution

 CEP18N5 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs