IRFS742 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DPWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75mG max Electronic ballast applications ID (Silicon Limited) 52

StrongIRFETIRFS7434PbFIRFSL7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applications 320AID (Silicon Limited)l Resonant mode power supplies SID (Package Limited) 19

StrongIRFETIRFS7430PbFIRFSL7430PbFHEXFET Power MOSFETApplicationsVDSS 40VDl Brushed motor drive applicationsRDS(on) typ. 0.97ml BLDC motor drive applicationsl Battery powered circuits max. 1.2mGl Half-bridge and full-bridge topologies426AID (Silicon Limited)l Synchronous rectifier applicationsSID (Package Limited) 195A l Resonant mode power suppliesl O

StrongIRFETIRFS7440PbFIRFSL7440PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl Battery powered circuitsDVDSS 40Vl Half-bridge and full-bridge topologiesRDS(on) typ. 2.0ml Synchronous rectifier applications max. 2.5ml Resonant mode power supplies GID 208Al OR-ing and redundant power switchesl DC/DC an

StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0mG max Resonant mode power supplies ID (Silicon Limited

November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DPWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75mG max Electronic ballast applications ID (Silicon Limited) 52

StrongIRFETIRFS7434PbFIRFSL7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applications 320AID (Silicon Limited)l Resonant mode power supplies SID (Package Limited) 19

StrongIRFETIRFS7430PbFIRFSL7430PbFHEXFET Power MOSFETApplicationsVDSS 40VDl Brushed motor drive applicationsRDS(on) typ. 0.97ml BLDC motor drive applicationsl Battery powered circuits max. 1.2mGl Half-bridge and full-bridge topologies426AID (Silicon Limited)l Synchronous rectifier applicationsSID (Package Limited) 195A l Resonant mode power suppliesl O

StrongIRFETIRFS7440PbFIRFSL7440PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl Battery powered circuitsDVDSS 40Vl Half-bridge and full-bridge topologiesRDS(on) typ. 2.0ml Synchronous rectifier applications max. 2.5ml Resonant mode power supplies GID 208Al OR-ing and redundant power switchesl DC/DC an

StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0mG max Resonant mode power supplies ID (Silicon Limited

IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

isc N-Channel MOSFET Transistor IRFS7434FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS7440PBFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC/AC InvertersDC/DC a

isc N-Channel MOSFET Transistor IRFS7437FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS