Справочник MOSFET. IRFS742

 

IRFS742 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFS742
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 178 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для IRFS742

 

 

IRFS742 Datasheet (PDF)

 8.1. Size:276K  1
irfs740 irfs741.pdf

IRFS742
IRFS742

 8.2. Size:292K  international rectifier
irfs7437pbf irfsl7437pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

 8.3. Size:542K  international rectifier
irfs7430-7ppbf.pdf

IRFS742
IRFS742

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DPWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75mG max Electronic ballast applications ID (Silicon Limited) 52

 8.4. Size:304K  international rectifier
irfs7434pbf irfsl7434pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7434PbFIRFSL7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applications 320AID (Silicon Limited)l Resonant mode power supplies SID (Package Limited) 19

 8.5. Size:298K  international rectifier
irfs7430pbf irfsl7430pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7430PbFIRFSL7430PbFHEXFET Power MOSFETApplicationsVDSS 40VDl Brushed motor drive applicationsRDS(on) typ. 0.97ml BLDC motor drive applicationsl Battery powered circuits max. 1.2mGl Half-bridge and full-bridge topologies426AID (Silicon Limited)l Synchronous rectifier applicationsSID (Package Limited) 195A l Resonant mode power suppliesl O

 8.6. Size:301K  international rectifier
irfs7440pbf irfsl7440pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7440PbFIRFSL7440PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl Battery powered circuitsDVDSS 40Vl Half-bridge and full-bridge topologiesRDS(on) typ. 2.0ml Synchronous rectifier applications max. 2.5ml Resonant mode power supplies GID 208Al OR-ing and redundant power switchesl DC/DC an

 8.7. Size:262K  international rectifier
irfs7437-7ppbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

 8.8. Size:538K  international rectifier
irfs7434-7ppbf.pdf

IRFS742
IRFS742

StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0mG max Resonant mode power supplies ID (Silicon Limited

 8.9. Size:924K  fairchild semi
irf740b irfs740b.pdf

IRFS742
IRFS742

November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

 8.10. Size:931K  samsung
irfs740a.pdf

IRFS742
IRFS742

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 8.11. Size:292K  infineon
irfs7437pbf irfsl7437pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

 8.12. Size:542K  infineon
irfs7430-7ppbf.pdf

IRFS742
IRFS742

StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DPWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75mG max Electronic ballast applications ID (Silicon Limited) 52

 8.13. Size:304K  infineon
irfs7434pbf irfsl7434pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7434PbFIRFSL7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applications 320AID (Silicon Limited)l Resonant mode power supplies SID (Package Limited) 19

 8.14. Size:298K  infineon
irfs7430pbf irfsl7430pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7430PbFIRFSL7430PbFHEXFET Power MOSFETApplicationsVDSS 40VDl Brushed motor drive applicationsRDS(on) typ. 0.97ml BLDC motor drive applicationsl Battery powered circuits max. 1.2mGl Half-bridge and full-bridge topologies426AID (Silicon Limited)l Synchronous rectifier applicationsSID (Package Limited) 195A l Resonant mode power suppliesl O

 8.15. Size:301K  infineon
irfs7440pbf irfsl7440pbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7440PbFIRFSL7440PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl Battery powered circuitsDVDSS 40Vl Half-bridge and full-bridge topologiesRDS(on) typ. 2.0ml Synchronous rectifier applications max. 2.5ml Resonant mode power supplies GID 208Al OR-ing and redundant power switchesl DC/DC an

 8.16. Size:262K  infineon
irfs7437-7ppbf.pdf

IRFS742
IRFS742

StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

 8.17. Size:538K  infineon
irfs7434-7ppbf.pdf

IRFS742
IRFS742

StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0mG max Resonant mode power supplies ID (Silicon Limited

 8.18. Size:1213K  blue-rocket-elect
irfs740.pdf

IRFS742
IRFS742

IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

 8.19. Size:251K  inchange semiconductor
irfs7434.pdf

IRFS742
IRFS742

isc N-Channel MOSFET Transistor IRFS7434FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.20. Size:205K  inchange semiconductor
irfs7440pbf.pdf

IRFS742
IRFS742

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS7440PBFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC/AC InvertersDC/DC a

 8.21. Size:252K  inchange semiconductor
irfs7437.pdf

IRFS742
IRFS742

isc N-Channel MOSFET Transistor IRFS7437FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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