IRFS742. Аналоги и основные параметры
Наименование производителя: IRFS742
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 178 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: TO220F
Аналог (замена) для IRFS742
- подборⓘ MOSFET транзистора по параметрам
IRFS742 даташит
8.2. Size:292K international rectifier
irfs7437pbf irfsl7437pbf.pdf 
StrongIRFET IRFS7437PbF IRFSL7437PbF Applications l Brushed Motor drive applications l BLDC Motor drive applications HEXFET Power MOSFET l Battery powered circuits VDSS 40V D l Half-bridge and full-bridge topologies l Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches G ID (Silicon Limite
8.3. Size:542K international rectifier
irfs7430-7ppbf.pdf 
StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D PWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75m G max Electronic ballast applications ID (Silicon Limited) 52
8.4. Size:304K international rectifier
irfs7434pbf irfsl7434pbf.pdf 
StrongIRFET IRFS7434PbF IRFSL7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications 320A ID (Silicon Limited) l Resonant mode power supplies S ID (Package Limited) 19
8.5. Size:298K international rectifier
irfs7430pbf irfsl7430pbf.pdf 
StrongIRFET IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications VDSS 40V D l Brushed motor drive applications RDS(on) typ. 0.97m l BLDC motor drive applications l Battery powered circuits max. 1.2m G l Half-bridge and full-bridge topologies 426A ID (Silicon Limited) l Synchronous rectifier applications S ID (Package Limited) 195A l Resonant mode power supplies l O
8.6. Size:301K international rectifier
irfs7440pbf irfsl7440pbf.pdf 
StrongIRFET IRFS7440PbF IRFSL7440PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications l Battery powered circuits D VDSS 40V l Half-bridge and full-bridge topologies RDS(on) typ. 2.0m l Synchronous rectifier applications max. 2.5m l Resonant mode power supplies G ID 208A l OR-ing and redundant power switches l DC/DC an
8.7. Size:262K international rectifier
irfs7437-7ppbf.pdf 
StrongIRFET IRFS7437-7PPbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D l PWM Inverterized topologies VDSS 40V l Battery powered circuits RDS(on) typ. 1.1m l Half-bridge and full-bridge topologies max. 1.4m l Electronic ballast applications G ID (Silicon Limited) 295A l Synchronous rectifier applications l Reso
8.8. Size:538K international rectifier
irfs7434-7ppbf.pdf 
StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V D Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0m G max Resonant mode power supplies ID (Silicon Limited
8.10. Size:931K samsung
irfs740a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
8.11. Size:1213K blue-rocket-elect
irfs740.pdf 
IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
8.12. Size:251K inchange semiconductor
irfs7434.pdf 
isc N-Channel MOSFET Transistor IRFS7434 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.13. Size:205K inchange semiconductor
irfs7440pbf.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFS7440PBF FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC/AC Inverters DC/DC a
8.14. Size:252K inchange semiconductor
irfs7437.pdf 
isc N-Channel MOSFET Transistor IRFS7437 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Другие IGBT... IRFS730, IRFS730A, IRFS731, IRFS732, IRFS733, IRFS740, IRFS740A, IRFS741, 75N75, IRFS743, IRFS750A, IRFS820, IRFS820A, IRFS821, IRFS822, IRFS823, IRFS830
