HY110N06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY110N06T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.6 nS
Cossⓘ - Capacitancia de salida: 385 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de HY110N06T MOSFET
HY110N06T Datasheet (PDF)
hy110n06t.pdf

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY110N06T 55V / 110A55V, RDS(ON)=5.5mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product (
hy1106s.pdf

HY1106SN-Channel Enhancement Mode MOSFETFeatures Pin Description 60 / 11AVDD13RDS(ON)= m (typ.) @ VGS=10VDDRDS(ON)=13.5m (typ.) @ VGS=4.5VAvalanche RatedSSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)pplicationsAD Power Management in DC/DC ConverterG N-Channel MOSFETSOrdering and Marki
hy1103s.pdf

HY1103SN-Channel Enhancement Mode MOSFET Feature Pin Description 30V/11ARDS(ON)=9.5m(typ.)@VGS = 10V RDS(ON)=11.5m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) SOP8LApplications Switching Application Power Management for DC/DC Battery ProtectionN-Channel MOSFET Ordering and Marking
Otros transistores... CEU5175 , HX2N60 , HX4N60 , HX50N06-TA3 , HX5N6 , HX70N06-TA3 , HX70N6 , HY10N65T , IRFZ46N , HY125N10T , HY12N65T , HY13N50T , HY150N075T , HY18N20D , HY18N20T , HY18N50W , HY1N60D .
History: HTS075P03 | UPA2826T1S | ME2301A-G | FSS230R | AUIRFS8403 | BLP042N15J-P | QM3024N3
History: HTS075P03 | UPA2826T1S | ME2301A-G | FSS230R | AUIRFS8403 | BLP042N15J-P | QM3024N3



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
ksc2383 | 2n3773 | b772 transistor | 50n06 | mje350 | 2n3866 | irf 3205 | 2n5088 equivalent