HY2N60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HY2N60D Datasheet (PDF)

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HY2N60D / HY2N60M600V / 2.0A600V, RDS(ON)=4.6@VGS=10V, ID=1.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMechanical Info

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HY2N60T / HY2N60FT600V / 2.0A600V, RDS(ON)=4.6@VGS=10V, ID=1.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

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SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY2N65D / HY2N65M 650V / 2A650V, RDS(ON)=4.6W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

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HY2N65T / HY2N65FT650V / 2A650V, RDS(ON)=4.6W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

Otros transistores... HY125N10T , HY12N65T , HY13N50T , HY150N075T , HY18N20D , HY18N20T , HY18N50W , HY1N60D , 8N60 , HY2N60T , HY2N65D , HY2N65T , HY2N70D , HY2N70T , HY3N80T , HY4N60D , HY4N60T .