HY2N60D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY2N60D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.6 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.6 Ohm

Encapsulados: TO-252

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HY2N60D datasheet

 ..1. Size:193K  hy
 hy2n60d.pdf pdf_icon

HY2N60D

HY2N60D / HY2N60M 600V / 2.0A 600V, RDS(ON)=4.6 @VGS=10V, ID=1.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS 2 1 1 D G 2 In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mechanical Info

 8.1. Size:124K  hy
 hy2n60t.pdf pdf_icon

HY2N60D

HY2N60T / HY2N60FT 600V / 2.0A 600V, RDS(ON)=4.6 @VGS=10V, ID=1.0A N-Channel Enhancement Mode MOSFET Features Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S

 9.1. Size:168K  hy
 hy2n65d.pdf pdf_icon

HY2N60D

SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY2N65D / HY2N65M 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

 9.2. Size:146K  hy
 hy2n65t.pdf pdf_icon

HY2N60D

HY2N65T / HY2N65FT 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

MOSTRAR MÁS

Otros transistores... HY125N10T, HY12N65T, HY13N50T, HY150N075T, HY18N20D, HY18N20T, HY18N50W, HY1N60D, IRFB7545, HY2N60T, HY2N65D, HY2N65T, HY2N70D, HY2N70T, HY3N80T, HY4N60D, HY4N60T