Справочник MOSFET. HY2N60D

 

HY2N60D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HY2N60D
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 43.8 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 2 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 12.6 ns
   Выходная емкость (Cd): 42 pf
   Сопротивление сток-исток открытого транзистора (Rds): 4.6 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для HY2N60D

 

 

HY2N60D Datasheet (PDF)

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hy2n60d.pdf

HY2N60D HY2N60D

HY2N60D / HY2N60M600V / 2.0A600V, RDS(ON)=4.6@VGS=10V, ID=1.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMechanical Info

 8.1. Size:124K  hy
hy2n60t.pdf

HY2N60D HY2N60D

HY2N60T / HY2N60FT600V / 2.0A600V, RDS(ON)=4.6@VGS=10V, ID=1.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

 9.1. Size:168K  hy
hy2n65d.pdf

HY2N60D HY2N60D

SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY2N65D / HY2N65M 650V / 2A650V, RDS(ON)=4.6W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

 9.2. Size:146K  hy
hy2n65t.pdf

HY2N60D HY2N60D

HY2N65T / HY2N65FT650V / 2A650V, RDS(ON)=4.6W@VGS=10V, ID=1AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDD5N60NZ

 

 
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