HY4N65D Todos los transistores

 

HY4N65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY4N65D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO-252
 

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HY4N65D Datasheet (PDF)

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HY4N65D

SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY4N65D / HY4N65M 650V / 4A650V, RDS(ON)=2.8W@VGS=10V, ID=2AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

 8.1. Size:145K  hy
 hy4n65t.pdf pdf_icon

HY4N65D

HY4N65T / HY4N65FT 650V / 4A650V, RDS(ON)=2.8W@VGS=10V, ID=2AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

 9.1. Size:101K  hy
 hy4n60t.pdf pdf_icon

HY4N65D

HY4N60T / HY4N60FT600V / 4.0A600V, RDS(ON)=2.4@VGS=10V, ID=2.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

 9.2. Size:181K  hy
 hy4n60d.pdf pdf_icon

HY4N65D

HY4N60D / HY4N60M600V / 4.0A600V, RDS(ON)=2.4@VGS=10V, ID=2.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMec

MOSTRAR MÁS

Otros transistores... HY2N60T , HY2N65D , HY2N65T , HY2N70D , HY2N70T , HY3N80T , HY4N60D , HY4N60T , 5N50 , HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D , HY6N60T , HY75N075T , HY75N10T .

History: SPD50N03S2L-06 | IPSA70R2K0CE | PMPB19XP | IRFD224PBF | APT12060LVFRG | OSG65R420PF | IRFS521

 

 
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