RU120N15Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU120N15Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 326 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: TO-247

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RU120N15Q datasheet

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RU120N15Q

RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

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RU120N15Q

RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

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 hrd120n10k hru120n10k.pdf pdf_icon

RU120N15Q

Sep 2015 BVDSS = 100 V RDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD120N10K HRU120N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

Otros transistores... HY75N10T, HY7N80T, HY80N075T, HY80N07T, HY8N50T, HY8N65T, HY8N70T, RU1088R, IRFB4110, RU120N15R, RU140N10R, RU16P8M4, RU190N10Q, RU190N10R, RU190N10S, RU1C001UN, RU1C001ZP