RU120N15Q MOSFET. Datasheet pdf. Equivalent
Type Designator: RU120N15Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 326 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 155 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 900 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-247
RU120N15Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU120N15Q Datasheet (PDF)
ru120n15q.pdf
RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A
ru120n15r.pdf
RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A
hrd120n10k hru120n10k.pdf
Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
