All MOSFET. RU120N15Q Datasheet

 

RU120N15Q Datasheet and Replacement


   Type Designator: RU120N15Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 326 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-247
 

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RU120N15Q Datasheet (PDF)

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RU120N15Q

RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

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RU120N15Q

RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

 7.1. Size:267K  semihow
 hrd120n10k hru120n10k.pdf pdf_icon

RU120N15Q

Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

Datasheet: HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R , IRFB4110 , RU120N15R , RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP .

History: CSD17312Q5

Keywords - RU120N15Q MOSFET datasheet

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