RU120N15Q Datasheet and Replacement
Type Designator: RU120N15Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 326 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-247
RU120N15Q substitution
RU120N15Q Datasheet (PDF)
ru120n15q.pdf

RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A
ru120n15r.pdf

RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A
hrd120n10k hru120n10k.pdf

Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
Datasheet: HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R , IRF640N , RU120N15R , RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP .
History: 2SJ351 | 2SK1928 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B | AUIRFP4227
Keywords - RU120N15Q MOSFET datasheet
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History: 2SJ351 | 2SK1928 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B | AUIRFP4227



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