RU190N10R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU190N10R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 190 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 155 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO-220

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RU190N10R Datasheet (PDF)

..1. Size:293K ruichips
ru190n10r.pdf

RU190N10RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

6.1. Size:281K ruichips
ru190n10q.pdf

RU190N10QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-247Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

6.2. Size:284K ruichips
ru190n10s.pdf

RU190N10SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-263Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

8.1. Size:399K ruichips
ru190n08.pdf

RU190N08N-Channel Advanced Power MOSFETFeatures Pin Description 80V/190ARDS (ON)=3.9m (Typ.) @ VGS=10VAvalanche RatedTO-220 TO-220F Reliable and Rugged Lead Free and Green Devices AvailableTO-263 TO-247ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Max

8.2. Size:324K ruichips
ru190n08q.pdf

RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

8.3. Size:330K ruichips
ru190n08r.pdf

RU190N08R N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

8.4. Size:322K ruichips
ru190n08s.pdf

RU190N08S N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-263 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SVF6N70MJG | RFM8P10 | AON7566

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Recientemente añadidas las descripciónes de los transistores: