RU190N10R. Аналоги и основные параметры

Наименование производителя: RU190N10R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 312 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 190 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 42 ns

Cossⓘ - Выходная емкость: 1000 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: TO-220

Аналог (замена) для RU190N10R

- подборⓘ MOSFET транзистора по параметрам

 

RU190N10R даташит

 ..1. Size:293K  ruichips
ru190n10r.pdfpdf_icon

RU190N10R

RU190N10R N-Channel Advanced Power MOSFET Features Pin Description 100V/190A RDS (ON)=6.5m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching Absolute Maximum Ratings N-Channe

 6.1. Size:281K  ruichips
ru190n10q.pdfpdf_icon

RU190N10R

RU190N10Q N-Channel Advanced Power MOSFET Features Pin Description 100V/190A RDS (ON)=6.5m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching Absolute Maximum Ratings N-Channe

 6.2. Size:284K  ruichips
ru190n10s.pdfpdf_icon

RU190N10R

RU190N10S N-Channel Advanced Power MOSFET Features Pin Description 100V/190A RDS (ON)=6.5m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-263 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching Absolute Maximum Ratings N-Channe

 8.1. Size:399K  ruichips
ru190n08.pdfpdf_icon

RU190N10R

RU190N08 N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m (Typ.) @ VGS=10V Avalanche Rated TO-220 TO-220F Reliable and Rugged Lead Free and Green Devices Available TO-263 TO-247 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching Absolute Max

Другие IGBT... HY8N65T, HY8N70T, RU1088R, RU120N15Q, RU120N15R, RU140N10R, RU16P8M4, RU190N10Q, IRF3710, RU190N10S, RU1C001UN, RU1C001ZP, RU1H100R, RU1H130Q, RU1H130R, RU1H130S, RU1H190R