RU1C001ZP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1C001ZP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 62 nS

Cossⓘ - Capacitancia de salida: 4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.8 Ohm

Encapsulados: UMT3F

 Búsqueda de reemplazo de RU1C001ZP MOSFET

- Selecciónⓘ de transistores por parámetros

 

RU1C001ZP datasheet

 ..1. Size:1322K  rohm
 ru1c001zp.pdf pdf_icon

RU1C001ZP

RU1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline l SOT-323FL VDSS -20V SC-85 RDS(on)(Max.) 3.8 UMT3F ID 100mA PD 200mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPack

 ..2. Size:404K  ruichips
 ru1c001zp.pdf pdf_icon

RU1C001ZP

RU1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V UMT3F (3) RDS(on) (Max.) 3.8W ID -100mA (1) PD 150mW (2) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIOD

 7.1. Size:2193K  rohm
 ru1c001un.pdf pdf_icon

RU1C001ZP

RU1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET lOutline l SOT-323FL VDSS 20V SC-85 RDS(on)(Max.) 3.5 UMT3F ID 100mA PD 150mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPackagi

 7.2. Size:586K  ruichips
 ru1c001un.pdf pdf_icon

RU1C001ZP

RU1C001UN Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V UMT3F (3) RDS(on) (Max.) 3.5W ID 100mA (1) PD 150mW (2) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE

MOSTRAR MÁS

Otros transistores... RU120N15Q, RU120N15R, RU140N10R, RU16P8M4, RU190N10Q, RU190N10R, RU190N10S, RU1C001UN, IRFB4115, RU1H100R, RU1H130Q, RU1H130R, RU1H130S, RU1H190R, RU1H190S, RU1H300Q, RU1H35K