RU1C001ZP Specs and Replacement

Type Designator: RU1C001ZP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: UMT3F

RU1C001ZP substitution

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RU1C001ZP datasheet

 ..1. Size:1322K  rohm
 ru1c001zp.pdf pdf_icon

RU1C001ZP

RU1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline l SOT-323FL VDSS -20V SC-85 RDS(on)(Max.) 3.8 UMT3F ID 100mA PD 200mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPack... See More ⇒

 ..2. Size:404K  ruichips
 ru1c001zp.pdf pdf_icon

RU1C001ZP

RU1C001ZP Pch -20V -100mA Small Signal MOSFET Datasheet lOutline VDSS -20V UMT3F (3) RDS(on) (Max.) 3.8W ID -100mA (1) PD 150mW (2) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIOD... See More ⇒

 7.1. Size:2193K  rohm
 ru1c001un.pdf pdf_icon

RU1C001ZP

RU1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET lOutline l SOT-323FL VDSS 20V SC-85 RDS(on)(Max.) 3.5 UMT3F ID 100mA PD 150mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPackagi... See More ⇒

 7.2. Size:586K  ruichips
 ru1c001un.pdf pdf_icon

RU1C001ZP

RU1C001UN Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V UMT3F (3) RDS(on) (Max.) 3.5W ID 100mA (1) PD 150mW (2) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE ... See More ⇒

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Detailed specifications: RU120N15Q, RU120N15R, RU140N10R, RU16P8M4, RU190N10Q, RU190N10R, RU190N10S, RU1C001UN, IRFB4115, RU1H100R, RU1H130Q, RU1H130R, RU1H130S, RU1H190R, RU1H190S, RU1H300Q, RU1H35K

Keywords - RU1C001ZP MOSFET specs

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