RU1H130Q Todos los transistores

 

RU1H130Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1H130Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 86 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-247
 

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RU1H130Q Datasheet (PDF)

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RU1H130Q

RU1H130QN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

 7.1. Size:321K  ruichips
 ru1h130r.pdf pdf_icon

RU1H130Q

RU1H130RN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

 7.2. Size:322K  ruichips
 ru1h130s.pdf pdf_icon

RU1H130Q

RU1H130SN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

 9.1. Size:288K  ruichips
 ru1h100r.pdf pdf_icon

RU1H130Q

RU1H100RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/75ARDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche testedApplicationsHigh Speed Power SwitchingUninterruptible Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbol Parame

MOSTRAR MÁS

Otros transistores... RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP , RU1H100R , IRFB4115 , RU1H130R , RU1H130S , RU1H190R , RU1H190S , RU1H300Q , RU1H35K , RU1H35L , RU1H35Q .

History: 2SK1608 | AO4294 | NCE8205I | SM1A18NSQG | IPB031NE7N3G | FHF10N65A

 

 
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