RU1H130Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU1H130Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 312 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 130 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 130 nC
Tiempo de subida (tr): 86 nS
Conductancia de drenaje-sustrato (Cd): 630 pF
Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de MOSFET RU1H130Q
RU1H130Q Datasheet (PDF)
ru1h130q.pdf
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RU1H130QN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan
ru1h130r.pdf
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RU1H130RN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan
ru1h130s.pdf
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RU1H130SN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan
ru1h100r.pdf
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RU1H100RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/75ARDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche testedApplicationsHigh Speed Power SwitchingUninterruptible Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbol Parame
ru1h150s.pdf
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RU1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 108V/150A, RDS (ON) =3.5m(Typ.)@VGS=10VD Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDDDDApplicat
ru1h150r.pdf
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RU1H150RN-Channel Advanced Power MOSFETFeatures Pin Description 108V/150A, RDS (ON) =3.5m(Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDDDDApplicat
ru1h190s.pdf
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RU1H190SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/190A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channe
ru1h190r.pdf
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RU1H190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/190A,RDS (ON) =5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channe
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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