All MOSFET. RU1H130Q Datasheet

 

RU1H130Q Datasheet and Replacement


   Type Designator: RU1H130Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-247
 

 RU1H130Q substitution

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RU1H130Q Datasheet (PDF)

 ..1. Size:292K  ruichips
 ru1h130q.pdf pdf_icon

RU1H130Q

RU1H130QN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

 7.1. Size:321K  ruichips
 ru1h130r.pdf pdf_icon

RU1H130Q

RU1H130RN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

 7.2. Size:322K  ruichips
 ru1h130s.pdf pdf_icon

RU1H130Q

RU1H130SN-Channel Advanced Power MOSFETFeatures Pin Description100V/130A, RDS (ON) =7m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications High Efficiency Synchronous Rectification in SMPS High Speed Power SwitchingGSN-Chan

 9.1. Size:288K  ruichips
 ru1h100r.pdf pdf_icon

RU1H130Q

RU1H100RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/75ARDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche testedApplicationsHigh Speed Power SwitchingUninterruptible Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbol Parame

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Datasheet: RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN , RU1C001ZP , RU1H100R , IRFB4115 , RU1H130R , RU1H130S , RU1H190R , RU1H190S , RU1H300Q , RU1H35K , RU1H35L , RU1H35Q .

History: IRFS7787PBF | IPT026N10N5 | NX7002BK | NCE65NF023T4 | TK16G60W5 | CTLDM7002A-M621H | PM514BA

Keywords - RU1H130Q MOSFET datasheet

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