RU1HE4H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU1HE4H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.7 V
   Carga de la puerta (Qg): 19 nC
   Tiempo de subida (tr): 39 nS
   Conductancia de drenaje-sustrato (Cd): 70 pF
   Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET RU1HE4H

RU1HE4H Datasheet (PDF)

..1. Size:277K ruichips
ru1he4h.pdf

RU1HE4HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/4A,RDS (ON) =72m (Typ.) @ VGS=10VRDS (ON) =80m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Converters.N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

8.1. Size:276K ruichips
ru1he4d.pdf

RU1HE4D N-Channel Advanced Power MOSFET Features Pin Description 100V/4A, RDS (ON) =72m (Typ.) @ VGS=10V RDS (ON) =80m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications DC-DC Converter Motor Driving N-Channel MOSFET Absolute Maximum Ratings Symbol Pa

9.1. Size:279K ruichips
ru1he3h.pdf

RU1HE3HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =135m (Typ.) @ VGS=10VRDS (ON) =150m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Converters LED BacklightN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

9.2. Size:293K ruichips
ru1he16l.pdf

RU1HE16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/16A,RDS (ON) =70m(Typ.)@VGS=10VRDS (ON) =85m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamet

9.3. Size:286K ruichips
ru1he12l.pdf

RU1HE12LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/12A,RDS (ON) =145m(Typ.)@VGS=10VRDS (ON) =160m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications ConvertersN-Channel MOSFETAbsolute Maximum Ra

9.4. Size:253K ruichips
ru1he3d.pdf

RU1HE3DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =130m (Typ.) @ VGS=10VRDS (ON) =140m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green AvailableApplications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolPa

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