Справочник MOSFET. RU1HE4H

 

RU1HE4H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RU1HE4H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 39 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для RU1HE4H

 

 

RU1HE4H Datasheet (PDF)

 ..1. Size:277K  ruichips
 ru1he4h.pdf

RU1HE4H RU1HE4H

RU1HE4HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/4A,RDS (ON) =72m (Typ.) @ VGS=10VRDS (ON) =80m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Converters.N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

 8.1. Size:276K  ruichips
 ru1he4d.pdf

RU1HE4H RU1HE4H

RU1HE4D N-Channel Advanced Power MOSFET Features Pin Description 100V/4A, RDS (ON) =72m (Typ.) @ VGS=10V RDS (ON) =80m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications DC-DC Converter Motor Driving N-Channel MOSFET Absolute Maximum Ratings Symbol Pa

 9.1. Size:279K  ruichips
 ru1he3h.pdf

RU1HE4H RU1HE4H

RU1HE3HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =135m (Typ.) @ VGS=10VRDS (ON) =150m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Converters LED BacklightN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

 9.2. Size:293K  ruichips
 ru1he16l.pdf

RU1HE4H RU1HE4H

RU1HE16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/16A,RDS (ON) =70m(Typ.)@VGS=10VRDS (ON) =85m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamet

 9.3. Size:286K  ruichips
 ru1he12l.pdf

RU1HE4H RU1HE4H

RU1HE12LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/12A,RDS (ON) =145m(Typ.)@VGS=10VRDS (ON) =160m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications ConvertersN-Channel MOSFETAbsolute Maximum Ra

 9.4. Size:253K  ruichips
 ru1he3d.pdf

RU1HE4H RU1HE4H

RU1HE3DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =130m (Typ.) @ VGS=10VRDS (ON) =140m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green AvailableApplications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolPa

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top