RU1HL13K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1HL13K

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 616 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-251

 Búsqueda de reemplazo de RU1HL13K MOSFET

- Selecciónⓘ de transistores por parámetros

 

RU1HL13K datasheet

 ..1. Size:296K  ruichips
 ru1hl13k.pdf pdf_icon

RU1HL13K

RU1HL13K P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (Typ.)@VGS=-10V RDS (ON) =180m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO251 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Cha

 7.1. Size:293K  ruichips
 ru1hl13l.pdf pdf_icon

RU1HL13K

RU1HL13L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (tpy.)@VGS=-10V RDS (ON) =180m (tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Cha

 7.2. Size:301K  ruichips
 ru1hl13r.pdf pdf_icon

RU1HL13K

RU1HL13R P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (tpy.)@VGS=-10V RDS (ON) =180m (tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO-220 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Ch

 9.1. Size:304K  ruichips
 ru1hl8l.pdf pdf_icon

RU1HL13K

RU1HL8L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-10A, RDS (ON) =120m (Typ.)@VGS=-10V RDS (ON) =180m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Chan

MOSTRAR MÁS

Otros transistores... RU1H80R, RU1HC2H, RU1HE12L, RU1HE16L, RU1HE3D, RU1HE3H, RU1HE4D, RU1HE4H, IRFB3607, RU1HL13L, RU1HL13R, RU1HL8L, RU1HP55R, RU1HP60R, RU1J002YN, RU1Z120R, RU1Z200Q