RU1HL13K Todos los transistores

 

RU1HL13K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1HL13K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 50 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 13 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.7 V
   Carga de la puerta (Qg): 28 nC
   Tiempo de subida (tr): 16 nS
   Conductancia de drenaje-sustrato (Cd): 616 pF
   Resistencia entre drenaje y fuente RDS(on): 0.2 Ohm
   Paquete / Cubierta: TO-251

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RU1HL13K Datasheet (PDF)

 ..1. Size:296K  ruichips
ru1hl13k.pdf

RU1HL13K RU1HL13K

RU1HL13KP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO251 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 7.1. Size:293K  ruichips
ru1hl13l.pdf

RU1HL13K RU1HL13K

RU1HL13LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 7.2. Size:301K  ruichips
ru1hl13r.pdf

RU1HL13K RU1HL13K

RU1HL13RP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO-220 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Ch

 9.1. Size:304K  ruichips
ru1hl8l.pdf

RU1HL13K RU1HL13K

RU1HL8LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-10A,RDS (ON) =120m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Chan

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