RU1HL13K Todos los transistores

 

RU1HL13K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1HL13K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 616 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO-251
 

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RU1HL13K Datasheet (PDF)

 ..1. Size:296K  ruichips
 ru1hl13k.pdf pdf_icon

RU1HL13K

RU1HL13KP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO251 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 7.1. Size:293K  ruichips
 ru1hl13l.pdf pdf_icon

RU1HL13K

RU1HL13LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 7.2. Size:301K  ruichips
 ru1hl13r.pdf pdf_icon

RU1HL13K

RU1HL13RP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO-220 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Ch

 9.1. Size:304K  ruichips
 ru1hl8l.pdf pdf_icon

RU1HL13K

RU1HL8LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-10A,RDS (ON) =120m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Chan

MOSTRAR MÁS

Otros transistores... RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D , RU1HE3H , RU1HE4D , RU1HE4H , AON7506 , RU1HL13L , RU1HL13R , RU1HL8L , RU1HP55R , RU1HP60R , RU1J002YN , RU1Z120R , RU1Z200Q .

History: LSB55R050GT | HM10P10D | FDU6688

 

 
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