RU3010H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU3010H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOP-8

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RU3010H datasheet

 ..1. Size:281K  ruichips
 ru3010h.pdf pdf_icon

RU3010H

RU3010H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/8A, RDS (ON) =18m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Other

 8.1. Size:296K  ruichips
 ru30100l.pdf pdf_icon

RU3010H

RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces

 8.2. Size:306K  ruichips
 ru30100r.pdf pdf_icon

RU3010H

RU30100R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =4 m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Max

 8.3. Size:304K  ruichips
 ru30105r.pdf pdf_icon

RU3010H

RU30105R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/125A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete

MOSTRAR MÁS

Otros transistores... RU2H50S, RU2HE2D, RU2HE5L, RU30100L, RU30100R, RU30105L, RU30105R, RU30106L, EMB04N03H, RU30120L, RU30120S, RU3013H, RU30140R, RU30160R, RU30160S, RU3020H, RU3020L