RU30160R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU30160R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO-220

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RU30160R datasheet

 ..1. Size:302K  ruichips
ru30160r.pdf pdf_icon

RU30160R

RU30160R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Com

 7.1. Size:323K  ruichips
ru30160s.pdf pdf_icon

RU30160R

RU30160S N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U

 9.1. Size:317K  ruichips
ru30120s.pdf pdf_icon

RU30160R

RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum

 9.2. Size:296K  ruichips
ru30100l.pdf pdf_icon

RU30160R

RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces

Otros transistores... RU30105L, RU30105R, RU30106L, RU3010H, RU30120L, RU30120S, RU3013H, RU30140R, 60N06, RU30160S, RU3020H, RU3020L, RU30230R, RU30231R, RU30290R, RU30291R, RU30300R