RU30160R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU30160R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 188 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 105 nS
Cossⓘ - Capacitancia de salida: 660 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de RU30160R MOSFET
- Selecciónⓘ de transistores por parámetros
RU30160R datasheet
..1. Size:302K ruichips
ru30160r.pdf 
RU30160R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Com
7.1. Size:323K ruichips
ru30160s.pdf 
RU30160S N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =2.3m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U
9.1. Size:317K ruichips
ru30120s.pdf 
RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum
9.2. Size:296K ruichips
ru30100l.pdf 
RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces
9.3. Size:276K ruichips
ru30120l.pdf 
RU30120L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Rat
9.4. Size:551K ruichips
ru30180m-c.pdf 
RU30180M-C N-Channel Advanced Power MOSFET Features Pin Description 30V/160A, RDS (ON) =1.4m (Typ.)@VGS=10V RDS (ON) =1.6m (Typ.)@VGS=4.5V Uses Ruichips Proprietary New TrenchTM Technology G Ultra Low On-Resistance SS S 100% Avalanche Tested D Reliable and Rugged D Qualified According to JEDEC Criteria D D PIN1 Lead Free and Green Devices (RoHS
9.5. Size:763K ruichips
ru30110m.pdf 
RU30110M N-Channel Advanced Power MOSFET Features Pin Description 30V/110A, RDS (ON) =3.8m (Typ.)@VGS=10V D RDS (ON) =4.6m (Typ.)@VGS=4.5V DD D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D Applications DC/DC Conve
9.6. Size:302K ruichips
ru30120r.pdf 
RU30120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ra
9.7. Size:281K ruichips
ru3013h.pdf 
RU3013H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/11A, RDS (ON) =16m (Typ.) @ VGS=10V RDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Othe
9.8. Size:281K ruichips
ru3010h.pdf 
RU3010H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/8A, RDS (ON) =18m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications SMPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unless Other
9.9. Size:306K ruichips
ru30100r.pdf 
RU30100R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =4 m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Max
9.10. Size:304K ruichips
ru30105r.pdf 
RU30105R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/125A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete
9.11. Size:294K ruichips
ru30105l.pdf 
RU30105L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/110A, RDS (ON) =3.2 m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Processor Power DC-DC Converters
9.12. Size:557K ruichips
ru30120m3.pdf 
RU30120M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.8m (Typ.)@VGS=10V D D D RDS (ON) =2.3m (Typ.)@VGS=4.5V D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN3030 D Applications Fast Ch
9.13. Size:304K ruichips
ru30140r.pdf 
RU30140R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/140A, RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit
9.14. Size:295K ruichips
ru30106l.pdf 
RU30106L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/130A, RDS (ON) =2.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Processo
Otros transistores... RU30105L, RU30105R, RU30106L, RU3010H, RU30120L, RU30120S, RU3013H, RU30140R, 60N06, RU30160S, RU3020H, RU3020L, RU30230R, RU30231R, RU30290R, RU30291R, RU30300R