RU30160R
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RU30160R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 188
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 160
A
Tj ⓘ - Максимальная температура канала: 175
°C
Qg ⓘ -
Общий заряд затвора: 96
nC
tr ⓘ -
Время нарастания: 105
ns
Cossⓘ - Выходная емкость: 660
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035
Ohm
Тип корпуса:
TO-220
Аналог (замена) для RU30160R
-
подбор ⓘ MOSFET транзистора по параметрам
RU30160R
Datasheet (PDF)
..1. Size:302K ruichips
ru30160r.pdf 
RU30160RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/160A,RDS (ON) =2.3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCom
7.1. Size:323K ruichips
ru30160s.pdf 
RU30160SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/160A, RDS (ON) =2.3m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating U
9.1. Size:317K ruichips
ru30120s.pdf 
RU30120SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A, RDS (ON) =2.5m(Typ.)@VGS=10VD RDS (ON) =3.3m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum
9.2. Size:296K ruichips
ru30100l.pdf 
RU30100LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/100A,RDS (ON) =2.2 m(Typ.)@VGS=10VRDS (ON) =4 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces
9.3. Size:276K ruichips
ru30120l.pdf 
RU30120LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Rat
9.4. Size:551K ruichips
ru30180m-c.pdf 
RU30180M-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/160A,RDS (ON) =1.4m(Typ.)@VGS=10VRDS (ON) =1.6m(Typ.)@VGS=4.5V Uses Ruichips Proprietary New TrenchTM TechnologyG Ultra Low On-ResistanceSSS 100% Avalanche TestedD Reliable and RuggedD Qualified According to JEDEC CriteriaDDPIN1 Lead Free and Green Devices (RoHS
9.5. Size:763K ruichips
ru30110m.pdf 
RU30110MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.8m(Typ.)@VGS=10VDRDS (ON) =4.6m(Typ.)@VGS=4.5V DDD Uses Ruichips advanced TrenchTM technology Ultra Low On-ResistanceG Fast Switching SpeedSS 100% avalanche testedS Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications DC/DC Conve
9.6. Size:302K ruichips
ru30120r.pdf 
RU30120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Ra
9.7. Size:281K ruichips
ru3013h.pdf 
RU3013HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/11A,RDS (ON) =16m (Typ.) @ VGS=10VRDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Othe
9.8. Size:281K ruichips
ru3010h.pdf 
RU3010HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/8A,RDS (ON) =18m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Other
9.9. Size:306K ruichips
ru30100r.pdf 
RU30100RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =4 m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Max
9.10. Size:304K ruichips
ru30105r.pdf 
RU30105RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/125A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
9.11. Size:294K ruichips
ru30105l.pdf 
RU30105LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processor Power DC-DC Converters
9.12. Size:557K ruichips
ru30120m3.pdf 
RU30120M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A,RDS (ON) =1.8m(Typ.)@VGS=10V DDDRDS (ON) =2.3m(Typ.)@VGS=4.5VD Uses Ruichips advanced TrenchTM technology Ultra Low On-ResistanceG Fast Switching SpeedSS 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant)PIN1DFN3030DApplications Fast Ch
9.13. Size:304K ruichips
ru30140r.pdf 
RU30140RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/140A,RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Unit
9.14. Size:295K ruichips
ru30106l.pdf 
RU30106LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/130A,RDS (ON) =2.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processo
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