RU30160R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU30160R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 188 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 160 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 96 nC
Время нарастания (tr): 105 ns
Выходная емкость (Cd): 660 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
Тип корпуса: TO-220
RU30160R Datasheet (PDF)
ru30160r.pdf
RU30160RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/160A,RDS (ON) =2.3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCom
ru30160s.pdf
RU30160SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/160A, RDS (ON) =2.3m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating U
ru30120s.pdf
RU30120SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A, RDS (ON) =2.5m(Typ.)@VGS=10VD RDS (ON) =3.3m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum
ru30100l.pdf
RU30100LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/100A,RDS (ON) =2.2 m(Typ.)@VGS=10VRDS (ON) =4 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces
ru30120l.pdf
RU30120LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Rat
ru30120r.pdf
RU30120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Ra
ru3013h.pdf
RU3013HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/11A,RDS (ON) =16m (Typ.) @ VGS=10VRDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Othe
ru3010h.pdf
RU3010HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/8A,RDS (ON) =18m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Other
ru30100r.pdf
RU30100RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =4 m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Max
ru30105r.pdf
RU30105RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/125A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru30105l.pdf
RU30105LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processor Power DC-DC Converters
ru30140r.pdf
RU30140RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/140A,RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Unit
ru30106l.pdf
RU30106LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/130A,RDS (ON) =2.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processo
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