RU30E30L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU30E30L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET RU30E30L

RU30E30L Datasheet (PDF)

..1. Size:289K ruichips
ru30e30l.pdf

RU30E30LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/30A,RDS (ON) =16m(Typ.)@VGS=10VRDS (ON) =26m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications DC/DC Converter Motor DrivesN-Channel MOSFET

9.1. Size:277K ruichips
ru30e7h.pdf

RU30E7HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/7.8A,RDS (ON) =16m (Typ.) @ VGS=10VRDS (ON) =25m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

9.2. Size:323K ruichips
ru30e4b.pdf

RU30E4BN-Channel Advanced Power MOSFETFeatures Pin Description 30V/4A, RDS (ON) =30m(Typ.)@VGS=10VD RDS (ON) =55m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected(Rating 2KV HBM) Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSN-Channel MOSFETAbsolute Maximum Rating

9.3. Size:293K ruichips
ru30e40l.pdf

RU30E40LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/60A,RDS (ON) =5m(Typ.)@VGS=10VRDS (ON) =10m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum

9.4. Size:331K ruichips
ru30e60m2.pdf

RU30E60M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/60A, RDS (ON) =3m(Typ.)@VGS=10VDDD RDS (ON) =6m(Typ.)@VGS=4.5V D Super High Dense Cell Design Ulta Low On-Resistance ESD Protected(Rating 4KV HBM) Fast Switching Speed GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN33

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQPF10N20C

Liste

Recientemente añadidas las descripciónes de los transistores: