RU30L15H Todos los transistores

 ..1. Size:307K  ruichips
 ru30l15h.pdf

RU30L15H P-Channel Advanced Power MOSFET MOSFET Features Pin Description -30V/-14.5A, RDS (ON) =13m (Typ.) @ VGS=-10V RDS (ON) =22m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Load Switching. PWM Applications. P-Channel MOSFET Absolute Maximum Ratings Symbol

 ..2. Size:863K  cn vbsemi
 ru30l15h.pdf

RU30L15H www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 9.1. Size:678K  ruichips
 ru30l40m3.pdf

RU30L40M3 P-Channel Advanced Power MOSFET Features Pin Description -30V/-40A, RDS (ON) =6.5m (Typ.)@VGS=-10V G S S RDS (ON) =9.5m (Typ.)@VGS=-4.5V S Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Reliable and Rugged DD D D 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) PIN1 DFN3030 Appli

 9.2. Size:270K  ruichips
 ru30l30m.pdf

RU30L30M P-Channel Advanced Power MOSFET MOSFET Features Pin Description -30V/-30A, RDS (ON) =12m (Typ.)@VGS=-10V RDS (ON) =20m (Typ.)@VGS=-4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN3333 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management Load Switching P-Channel MOSFET Absolute

 9.3. Size:760K  ruichips
 ru30l30m3.pdf

RU30L30M3 P-Channel Advanced Power MOSFET Features Pin Description -30V/-30A, RDS (ON) =14m (Typ.)@VGS=-10V RDS (ON) =18m (Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technology G S Excellent QgxRDS(on) product(FOM) S S Reliable and Rugged R li bl d R d S D 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Compliant) D D

 9.4. Size:337K  ruichips
 ru30l70l.pdf

RU30L70L P-Channel Advanced Power MOSFET Features Pin Description -30V/-70A, RDS (ON) =5.5m (Typ.)@VGS=-10V D RDS (ON) =9m (Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design ESD Protected ESD Protected 100% Avalanche Tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS Compliant) S TO252 Applications

 9.5. Size:751K  ruichips
 ru30l40m-c.pdf

RU30L40M-C P-Channel Advanced Power MOSFET Features Pin Description -30V/-40A, RDS (ON) =5.2m (Typ.)@VGS=-10V G S S RDS (ON) =7.5m (Typ.)@VGS=-4.5V S Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Low On-Resistance DD D D ESD protected 100% avalanche tested PIN1 Lead Free and Green Devices (RoHS Compliant) DFN506

 9.6. Size:899K  cn vbsemi
 ru30l30m.pdf

RU30L30M www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e,f Qg (Typ.) ,Typ. Definition 0.0075 at VGS = - 10 V -35 TrenchFET Power MOSFET - 30 24.6 nC Low Thermal Resistance PowerPAK 0.0105 at VGS = - 4.5V - 30 Package with Small Size and Low 1.07 mm Profile 100 % Rg