RU30L15H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU30L15H
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 39 nC
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 250 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: SOP-8
RU30L15H Datasheet (PDF)
ru30l15h.pdf
RU30L15HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-14.5A,RDS (ON) =13m (Typ.) @ VGS=-10VRDS (ON) =22m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Load Switching. PWM Applications.P-Channel MOSFETAbsolute Maximum RatingsSymbol
ru30l15h.pdf
RU30L15Hwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
ru30l40m3.pdf
RU30L40M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =6.5m(Typ.)@VGS=-10VGSSRDS (ON) =9.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Reliable and Rugged DDDD 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030Appli
ru30l30m.pdf
RU30L30MP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-30A,RDS (ON) =12m(Typ.)@VGS=-10VRDS (ON) =20m(Typ.)@VGS=-4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche testedPDFN3333 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management Load SwitchingP-Channel MOSFETAbsolute
ru30l30m3.pdf
RU30L30M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-30A,RDS (ON) =14m(Typ.)@VGS=-10VRDS (ON) =18m(Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technologyGS Excellent QgxRDS(on) product(FOM)SS Reliable and RuggedR li bl d R dSD 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)DD
ru30l70l.pdf
RU30L70LP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-70A, RDS (ON) =5.5m(Typ.)@VGS=-10V D RDS (ON) =9m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design ESD Protected ESD Protected 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS Compliant)STO252Applications
ru30l40m-c.pdf
RU30L40M-CP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =5.2m(Typ.)@VGS=-10VGSSRDS (ON) =7.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Low On-Resistance DDDD ESD protected 100% avalanche testedPIN1 Lead Free and Green Devices (RoHS Compliant)DFN506
ru30l30m.pdf
RU30L30Mwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.),Typ.Definition0.0075 at VGS = - 10 V -35 TrenchFET Power MOSFET- 30 24.6 nC Low Thermal Resistance PowerPAK0.0105 at VGS = - 4.5V - 30Package with Small Size and Low 1.07 mm Profile 100 % Rg
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD