RU30P3B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU30P3B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET RU30P3B

RU30P3B Datasheet (PDF)

..1. Size:338K ruichips
ru30p3b.pdf

RU30P3BP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-3.5A, RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =80m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFETAbsolute Maximum RatingsSym

9.1. Size:303K ruichips
ru30p5h.pdf

RU30P5HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5.5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =55m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA

9.2. Size:338K ruichips
ru30p4c.pdf

RU30P4CP-Channel Advanced Power MOSFETFeatures Pin Description -25V/-4A, RDS (ON) =45m(Typ.)@VGS=-10VD RDS (ON) =55m(Typ.)@VGS=-4.5V RDS (ON) =75m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23-3DApplications Load SwitchDC/DC Converter

9.3. Size:658K ruichips
ru30p40m3.pdf

RU30P40M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =7.5m(Typ.)@VGS=-10VGSSRDS (ON) =11.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Reliable and Rugged DDDD 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030DA

9.4. Size:339K ruichips
ru30p4b.pdf

RU30P4BP-Channel Advanced Power MOSFETFeatures Pin Description -25V/-4A, RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =60m(Typ.)@VGS=-4.5V RDS (ON) =80m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell DesignG Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFE

9.5. Size:340K ruichips
ru30p4c6.pdf

RU30P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-4A,S RDS (ON) =50m(Typ.)@VGS=-10V RDS (ON) =75m(Typ.)@VGS=-4.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DApplications Load SwitchDC/DC ConverterGSP-Channel MOSFET

9.6. Size:284K ruichips
ru30p5d.pdf

RU30P5DP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5.5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =55m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOT-223Applications Power Management.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (

9.7. Size:330K ruichips
ru30p4h.pdf

RU30P4HP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-5A,D RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =80m(Typ.)@VGS=-4.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSpin1SSOP-8D D D D(8) (6)(7) (5)ApplicationsPower managementLoa

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