RU30P3B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU30P3B

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOT-23

 Búsqueda de reemplazo de RU30P3B MOSFET

- Selecciónⓘ de transistores por parámetros

 

RU30P3B datasheet

 ..1. Size:338K  ruichips
ru30p3b.pdf pdf_icon

RU30P3B

RU30P3B P-Channel Advanced Power MOSFET Features Pin Description -30V/-3.5A, RDS (ON) =50m (Typ.)@VGS=-10V D RDS (ON) =80m (Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) S SOT23 D Applications Load Switch G S P-Channel MOSFET Absolute Maximum Ratings Sym

 9.1. Size:303K  ruichips
ru30p5h.pdf pdf_icon

RU30P3B

RU30P5H P-Channel Advanced Power MOSFET MOSFET Features Pin Description -30V/-5.5A, RDS (ON) =38m (Typ.) @ VGS=-10V RDS (ON) =55m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOP-8 Applications Power Management. P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA

 9.2. Size:338K  ruichips
ru30p4c.pdf pdf_icon

RU30P3B

RU30P4C P-Channel Advanced Power MOSFET Features Pin Description -25V/-4A, RDS (ON) =45m (Typ.)@VGS=-10V D RDS (ON) =55m (Typ.)@VGS=-4.5V RDS (ON) =75m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged G Lead Free and Green Devices Available (RoHS Compliant) S SOT23-3 D Applications Load Switch DC/DC Converter

 9.3. Size:658K  ruichips
ru30p40m3.pdf pdf_icon

RU30P3B

RU30P40M3 P-Channel Advanced Power MOSFET Features Pin Description -30V/-40A, RDS (ON) =7.5m (Typ.)@VGS=-10V G S S RDS (ON) =11.5m (Typ.)@VGS=-4.5V S Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Reliable and Rugged DD D D 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) PIN1 DFN3030 D A

Otros transistores... RU30D8H, RU30E30L, RU30E40L, RU30E4B, RU30E60M2, RU30E7H, RU30L15H, RU30L30M, IRFP250N, RU30P4B, RU30P4C, RU30P4C6, RU30P4H, RU30P5D, RU30P5H, RU30S4H, RU30S5H