Справочник MOSFET. RU30P3B

 

RU30P3B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RU30P3B
   Маркировка: D*
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 3.5 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 12 nC
   Время нарастания (tr): 13 ns
   Выходная емкость (Cd): 95 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для RU30P3B

 

 

RU30P3B Datasheet (PDF)

 ..1. Size:338K  ruichips
 ru30p3b.pdf

RU30P3B RU30P3B

RU30P3BP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-3.5A, RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =80m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFETAbsolute Maximum RatingsSym

 9.1. Size:303K  ruichips
 ru30p5h.pdf

RU30P3B RU30P3B

RU30P5HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5.5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =55m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA

 9.2. Size:338K  ruichips
 ru30p4c.pdf

RU30P3B RU30P3B

RU30P4CP-Channel Advanced Power MOSFETFeatures Pin Description -25V/-4A, RDS (ON) =45m(Typ.)@VGS=-10VD RDS (ON) =55m(Typ.)@VGS=-4.5V RDS (ON) =75m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23-3DApplications Load SwitchDC/DC Converter

 9.3. Size:339K  ruichips
 ru30p4b.pdf

RU30P3B RU30P3B

RU30P4BP-Channel Advanced Power MOSFETFeatures Pin Description -25V/-4A, RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =60m(Typ.)@VGS=-4.5V RDS (ON) =80m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell DesignG Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFE

 9.4. Size:340K  ruichips
 ru30p4c6.pdf

RU30P3B RU30P3B

RU30P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-4A,S RDS (ON) =50m(Typ.)@VGS=-10V RDS (ON) =75m(Typ.)@VGS=-4.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DApplications Load SwitchDC/DC ConverterGSP-Channel MOSFET

 9.5. Size:284K  ruichips
 ru30p5d.pdf

RU30P3B RU30P3B

RU30P5DP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5.5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =55m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOT-223Applications Power Management.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (

 9.6. Size:330K  ruichips
 ru30p4h.pdf

RU30P3B RU30P3B

RU30P4HP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-5A,D RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =80m(Typ.)@VGS=-4.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSpin1SSOP-8D D D D(8) (6)(7) (5)ApplicationsPower managementLoa

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