RU40120M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU40120M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 4.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 205 nS

Cossⓘ - Capacitancia de salida: 680 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: PDFN5060

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RU40120M datasheet

 ..1. Size:297K  ruichips
 ru40120m.pdf pdf_icon

RU40120M

RU40120M N-Channel Advanced Power MOSFET Features Pin Description 40V/120A, RDS (ON) =2.7m (Typ.)@VGS=10V D D D D Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters Power Supply G

 7.1. Size:301K  ruichips
 ru40120r.pdf pdf_icon

RU40120M

RU40120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/120A, RDS (ON) =3.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete

 7.2. Size:322K  ruichips
 ru40120s.pdf pdf_icon

RU40120M

RU40120S N-Channel Advanced Power MOSFET Features Pin Description 40V/120A, D RDS (ON) =3.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U

 7.3. Size:322K  ruichips
 ru40120l.pdf pdf_icon

RU40120M

RU40120L N-Channel Advanced Power MOSFET Features Pin Description 40V/120A, D RDS (ON) =2.8m (Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications

MOSTRAR MÁS

Otros transistores... RU3520H, RU3560L, RU3568L, RU3568R, RU3582R, RU3582S, RU3710R, RU3710S, 12N60, RU40120R, RU40120S, RU40130R, RU40150R, RU40150S, RU40190Q2, RU40190S, RU40220R