RU40130R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU40130R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 135 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 72 nS

Cossⓘ - Capacitancia de salida: 620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO-220

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RU40130R datasheet

 ..1. Size:304K  ruichips
 ru40130r.pdf pdf_icon

RU40130R

RU40130R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/135A, RDS (ON) =3.2m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Un

 9.1. Size:296K  ruichips
 ru40190q2.pdf pdf_icon

RU40130R

RU40190Q2 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/190A, RDS (ON) =2.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-3P Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximu

 9.2. Size:301K  ruichips
 ru40120r.pdf pdf_icon

RU40130R

RU40120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 40V/120A, RDS (ON) =3.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete

 9.3. Size:628K  ruichips
 ru40191s.pdf pdf_icon

RU40130R

RU40191S N-Channel Advanced Power MOSFET Features Pin Description 40V/190A, RDS (ON) =1.8m (Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications DC-DC Converters and Off-line UPS Switching Applications G S N-Channel MOSFET Abso

MOSTRAR MÁS

Otros transistores... RU3568R, RU3582R, RU3582S, RU3710R, RU3710S, RU40120M, RU40120R, RU40120S, IRFB3607, RU40150R, RU40150S, RU40190Q2, RU40190S, RU40220R, RU40231Q2, RU40231R, RU40280R