RU40150S Todos los transistores

 

RU40150S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU40150S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 188 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 106 nS
   Cossⓘ - Capacitancia de salida: 680 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET RU40150S

 

RU40150S Datasheet (PDF)

 ..1. Size:292K  ruichips
ru40150s.pdf

RU40150S
RU40150S

RU40150SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/150A,RDS (ON) =3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

 7.1. Size:301K  ruichips
ru40150r.pdf

RU40150S
RU40150S

RU40150RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/150A,RDS (ON) =3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

 9.1. Size:296K  ruichips
ru40190q2.pdf

RU40150S
RU40150S

RU40190Q2N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-3PApplications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 9.2. Size:301K  ruichips
ru40120r.pdf

RU40150S
RU40150S

RU40120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =3.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

 9.3. Size:628K  ruichips
ru40191s.pdf

RU40150S
RU40150S

RU40191SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A, RDS (ON) =1.8m(Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)TO263DApplications DC-DC Converters and Off-line UPS Switching ApplicationsGSN-Channel MOSFETAbso

 9.4. Size:322K  ruichips
ru40120s.pdf

RU40150S
RU40150S

RU40120SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A,D RDS (ON) =3.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating U

 9.5. Size:296K  ruichips
ru40190s.pdf

RU40150S
RU40150S

RU40190SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 9.6. Size:304K  ruichips
ru40130r.pdf

RU40150S
RU40150S

RU40130RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/135A,RDS (ON) =3.2m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Un

 9.7. Size:297K  ruichips
ru40120m.pdf

RU40150S
RU40150S

RU40120MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A, RDS (ON) =2.7m(Typ.)@VGS=10V DDDD Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) GSSSPIN1PIN1PDFN5060DApplications DC/DC Converters Power SupplyG

 9.8. Size:305K  ruichips
ru40190r.pdf

RU40150S
RU40150S

RU40190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 9.9. Size:322K  ruichips
ru40120l.pdf

RU40150S
RU40150S

RU40120LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A,DRDS (ON) =2.8m(Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications

 9.10. Size:368K  ruichips
ru40180r.pdf

RU40150S
RU40150S

RU40180RN-Channel Advanced Power MOSFETFeatures Pin Description 40V/180A, RDS (ON) =1.8m(Typ.)@VGS=10V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Complian

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