RU40150S
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RU40150S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 188
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 150
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 106
ns
Cossⓘ - Выходная емкость: 680
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004
Ohm
Тип корпуса:
TO-263
- подбор MOSFET транзистора по параметрам
RU40150S
Datasheet (PDF)
..1. Size:292K ruichips
ru40150s.pdf 

RU40150SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/150A,RDS (ON) =3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
7.1. Size:301K ruichips
ru40150r.pdf 

RU40150RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/150A,RDS (ON) =3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
9.1. Size:296K ruichips
ru40190q2.pdf 

RU40190Q2N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-3PApplications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu
9.2. Size:301K ruichips
ru40120r.pdf 

RU40120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =3.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
9.3. Size:628K ruichips
ru40191s.pdf 

RU40191SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A, RDS (ON) =1.8m(Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)TO263DApplications DC-DC Converters and Off-line UPS Switching ApplicationsGSN-Channel MOSFETAbso
9.4. Size:322K ruichips
ru40120s.pdf 

RU40120SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A,D RDS (ON) =3.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating U
9.5. Size:296K ruichips
ru40190s.pdf 

RU40190SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu
9.6. Size:304K ruichips
ru40130r.pdf 

RU40130RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/135A,RDS (ON) =3.2m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Un
9.7. Size:297K ruichips
ru40120m.pdf 

RU40120MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A, RDS (ON) =2.7m(Typ.)@VGS=10V DDDD Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) GSSSPIN1PIN1PDFN5060DApplications DC/DC Converters Power SupplyG
9.8. Size:305K ruichips
ru40190r.pdf 

RU40190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu
9.9. Size:322K ruichips
ru40120l.pdf 

RU40120LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A,DRDS (ON) =2.8m(Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications
9.10. Size:368K ruichips
ru40180r.pdf 

RU40180RN-Channel Advanced Power MOSFETFeatures Pin Description 40V/180A, RDS (ON) =1.8m(Typ.)@VGS=10V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Complian
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History: NCEP065N10GU
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