RU40150S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU40150S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 188 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 150 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 95 nC
trⓘ - Время нарастания: 106 ns
Cossⓘ - Выходная емкость: 680 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: TO-263
RU40150S Datasheet (PDF)
ru40150s.pdf
RU40150SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/150A,RDS (ON) =3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru40150r.pdf
RU40150RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/150A,RDS (ON) =3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru40190q2.pdf
RU40190Q2N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-3PApplications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu
ru40120r.pdf
RU40120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/120A,RDS (ON) =3.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru40191s.pdf
RU40191SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A, RDS (ON) =1.8m(Typ.)@VGS=10V D Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)TO263DApplications DC-DC Converters and Off-line UPS Switching ApplicationsGSN-Channel MOSFETAbso
ru40120s.pdf
RU40120SN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A,D RDS (ON) =3.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating U
ru40190s.pdf
RU40190SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu
ru40130r.pdf
RU40130RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/135A,RDS (ON) =3.2m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Un
ru40120m.pdf
RU40120MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A, RDS (ON) =2.7m(Typ.)@VGS=10V DDDD Super High Dense Cell Design Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) GSSSPIN1PIN1PDFN5060DApplications DC/DC Converters Power SupplyG
ru40190r.pdf
RU40190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 40V/190A,RDS (ON) =2.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu
ru40120l.pdf
RU40120LN-Channel Advanced Power MOSFETFeatures Pin Description 40V/120A,DRDS (ON) =2.8m(Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications
ru40180r.pdf
RU40180RN-Channel Advanced Power MOSFETFeatures Pin Description 40V/180A, RDS (ON) =1.8m(Typ.)@VGS=10V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Complian
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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