RU40L10H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU40L10H
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 40 nC
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Paquete / Cubierta: SOP-8
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RU40L10H Datasheet (PDF)
ru40l10h.pdf
RU40L10HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-9.5A,RDS (ON) =19m (Typ.) @ VGS=-10VRDS (ON) =30m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications DC-DC Converter.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Unit
ru40l10l.pdf
RU40L10LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-32A,RDS (ON) =20m(Typ.)@VGS=-10VRDS (ON) =30m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Supplies InverterP-Channel MOSFET
ru40l10l.pdf
RU40L10Lwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl
ru40l60m.pdf
RU40L60MP-Channel Advanced Power MOSFETFeatures Pin Description -40V/-60A,RDS (ON) =8.5m(Typ.)@VGS=-10VRDS (ON) =11m(Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technologyGS Excellent QgxRDS(on) product(FOM)SS Reliable and RuggedR li bl d R dSD 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)DD
ru40l60l.pdf
RU40L60LP-Channel Advanced Power MOSFETFeatures Pin Description -40V/-60A,D RDS (ON) =8.5m(Typ.)@VGS=-10V RDS (ON) =11m(Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Reliable and RuggedR li bl d R d 100% avalanche tested Lead Free and Green Devices (RoHS Compliant)GSTO252DDDDDDApplications
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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