RU40L10H Todos los transistores

 

RU40L10H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU40L10H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOP-8

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RU40L10H Datasheet (PDF)

 ..1. Size:307K  ruichips
ru40l10h.pdf

RU40L10H RU40L10H

RU40L10HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-9.5A,RDS (ON) =19m (Typ.) @ VGS=-10VRDS (ON) =30m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications DC-DC Converter.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Unit

 7.1. Size:309K  ruichips
ru40l10l.pdf

RU40L10H RU40L10H

RU40L10LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -40V/-32A,RDS (ON) =20m(Typ.)@VGS=-10VRDS (ON) =30m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Supplies InverterP-Channel MOSFET

 7.2. Size:883K  cn vbsemi
ru40l10l.pdf

RU40L10H RU40L10H

RU40L10Lwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl

 9.1. Size:765K  ruichips
ru40l60m.pdf

RU40L10H RU40L10H

RU40L60MP-Channel Advanced Power MOSFETFeatures Pin Description -40V/-60A,RDS (ON) =8.5m(Typ.)@VGS=-10VRDS (ON) =11m(Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technologyGS Excellent QgxRDS(on) product(FOM)SS Reliable and RuggedR li bl d R dSD 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)DD

 9.2. Size:403K  ruichips
ru40l60l.pdf

RU40L10H RU40L10H

RU40L60LP-Channel Advanced Power MOSFETFeatures Pin Description -40V/-60A,D RDS (ON) =8.5m(Typ.)@VGS=-10V RDS (ON) =11m(Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Reliable and RuggedR li bl d R d 100% avalanche tested Lead Free and Green Devices (RoHS Compliant)GSTO252DDDDDDApplications

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